Nantong Zhisheng Microelectronics Technology Co., Ltd. is a high-tech enterprise specializing in the design of RF microwave integrated circuits. The company possesses industry-leading capabilities in developing civilian RF front-end products and microwave/millimeter-wave monolithic circuits. Key personnel hail from renowned industry leaders, with core members boasting extensive development and market experience in mobile communication RF front-ends and microwave transmit/receive circuits. Our products deliver outstanding performance and are deployed in 5G base stations, mobile phones, IoT Cat.1 devices, and major domestic projects. The company excels in GaAs/GaN material processes, device design, modeling, DOE, and microwave circuit/component R&D, with comprehensive expertise in the entire development lifecycle of III-V compound semiconductor products.

Founded in 2016, the company is headquartered in Nantong North Hi-Tech City with an R&D branch in Chongqing. with discrete sales offices and technical support centers in Shenzhen, Shanghai, and Xi'an. The headquarters laboratory building houses a 150-square-meter Class 10,000 cleanroom, a 50GHz RF/microwave chip testing system, and imported chip R&D equipment including eutectic placement machines, semi-automatic bonding machines, flip-chip stations, laser trimming tools, and dedicated FT testing equipment. Design capabilities encompass digital/analog/RF/microwave, large/small signal, pHEMT/HBT/SOI/CMOS/MEMS, monolithic/module/package solutions, aligning with current and future trends toward high-frequency, high-integration, and advanced packaging. Standardized design templates and platformization, combined with optimized chip circuit design workflows, enhance development efficiency for similar products. Product development integrates DFM/DFY principles with system-level co-simulation of chip operating environments, boosting design success rates and mass production yields. The current R&D team comprises over ten PhDs and Masters with extensive industry experience. Collaborations with renowned domestic and international foundries and packaging/testing facilities have completed preliminary design and verification. Current developments include: (MMMB PA; 5G PAMiF) module products (TxM Base Phase2 & Phase5N) and a 25-27GHz 28dBm power amplifier for 5G communications.

The company engages in extensive technical collaboration with domestic universities and research institutes in developing microwave and millimeter-wave monolithic integrated circuits. Its full product line maintains close cooperation with renowned domestic equipment manufacturers. The core team members, including the principal investigator of this project, have developed dozens of leading-performance L/C/X/Ku/Ka-band 0.5-50W GaAs/GaN power monolithic and power internal matching devices at domestic research institutes in recent years. In early 2017, they undertook the Ministry of Science and Technology's 5G Communication Core Chip Project. The 01 Special Project is a major national science and technology initiative under the National Core Electronic Components, High-End General-Purpose Chips, and Basic Software Products Program. The R&D of 5G communication chips under this project represents one of the key technologies for next-generation communications. Currently, both domestic and international efforts in this field are in their nascent stages, presenting a critical opportunity for us to achieve leapfrog development and overtake competitors.